Elaboration of III-V nitrides quantum dots in molecular beam epitaxy

The growth conditions of hexagonal GaN, InN and AlN in Molecular Beam Epitaxy were investigated by using: Reflection High Energy Electron Diffraction (RHEED), Electron Microscopy and Atomic Force Microscopy. It was demonstrated that relaxation of compressed GaN grown on AlN and of compressed InN grown on GaN occurs through 3-dimensional islanding after completion of a 2-dimensional wetting layer, characteristic of a Stranski-Krastanov growth. Quantum confinement effects in nanometric GaN islands were demonstrated by cathode-and photoluminescence experiments.