Study of surface segregation of Si on palladium silicide using Auger electron spectroscopy

被引：9

作者：

Abhaya, S ^{[1
]}

Amarendra, G

Gopalan, P

Reddy, GLN

Saroja, S

机构：

[1] Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India

[2] Indira Gandhi Ctr Atom Res, Phys Met Sect, Kalpakkam 603102, Tamil Nadu, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2004年 / 37卷 / 22期

关键词：

D O I：

10.1088/0022-3727/37/22/013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transformation of Pd/Si to Pd2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd2Si is formed in the form of islands, which grow as the annealing temperature is increased.

引用

页码：3140 / 3144

页数：5

共 12 条

[1] PD2SI SURFACES THERMALLY ENRICHED IN SILICON - EVIDENCE OF NEW SI-PD BONDS
ABBATI, I
ROSSI, G
BRAICOVICH, L
LINDAU, I
SPICER, WE
DEMICHELIS, B
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6994 - 6996
[2] Evidence for excess vacancy defects in the Pd-Si system: positron annihilation, x-ray diffraction and Auger electron spectroscopy study
Abhaya, S
Amarendra, G
Reddy, GLN
Rajaraman, R
Rao, GV
Narayana, KL
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (46) : L713 - L719
[3] SELF-DIFFUSION OF SILICON IN POLYCRYSTALLINE PD2SI IN THE ABSENCE OF GROWTH
EGAN, JM
COMRIE, CM
[J]. PHYSICAL REVIEW B, 1989, 40 (17): : 11670 - 11675
[4] STOICHIOMETRIC AND STRUCTURAL ORIGIN OF ELECTRONIC STATES AT THE PD2SI-SI INTERFACE
HO, PS
SCHMID, PE
FOLL, H
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (12) : 782 - 785
[5] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI
HUTCHINS, GA
SHEPELA, A
[J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363
[6] Murarka S.P., 1983, Silicides for VLSI applications, P71
[7] SURFACE-STRUCTURE OF EPITAXIAL PD2SI THIN-FILMS
OURA, K
OKADA, S
KISHIKAWA, Y
HANAWA, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 138 - 140
[8] PALLADIUM SILICIDE FORMATION OBSERVED BY AUGER-ELECTRON SPECTROSCOPY
ROBINSON, GY
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (03) : 158 - 160
[9] NEW INSIGHT INTO SILICIDE FORMATION - THE CREATION OF SILICON SELF-INTERSTITIALS
RONAY, M
SCHAD, RG
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (17) : 2042 - 2045
[10] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE
RUBLOFF, GW
HO, PS
FREEOUF, JF
LEWIS, JE
[J]. PHYSICAL REVIEW B, 1981, 23 (08) : 4183 - 4196

← 1 2 →