Optically-detected microwave resonance in InGaAsN/GaAs quantum wells and InAs/GaAs quantum dots emitting around 1.3 μm

被引:1
|
作者
Baranov, P. G. [1 ]
Romanov, N. G. [1 ]
Preobrazhenski, V. L. [1 ]
Egorov, A. Yu. [1 ]
Ustinov, V. M. [1 ]
Sobolev, M. M. [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 2, NO 6 | 2003年 / 2卷 / 06期
关键词
quantum well; quantum dot; ODMR; ODCR;
D O I
10.1142/S0219581X03001577
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Optically-detected magnetic resonance (ODMR) and optically-detected cyclotron resonance (ODCR) were applied to study two types of nanostructures emitting around 1.3 mu m: quantum wells with low nitrogen content and InAs/GaAs quantum dots (both isolated and vertically-coupled). ODMR with the axial symmetry (effective g factor vertical bar g parallel to vertical bar = 3.61 and vertical bar g perpendicular to vertical bar = 0.7) was found in unannealed InGaAsN/GaAs multiple-quantum well structures and ascribed to electrons in the quantum wells; the sign of g factor is suggested to be negative. There is evidence that before annealing the InGaAsN/GaAs structure has properties, which are typical for quantum wells, but after annealing the structure is completely-changed and resembles a quantum-dot-like structure. The effect of cyclotron resonance on the luminescence of InAs quantum dots was found. The observed ODCR seems to belong to a two-dimensional system, such as a heterointerface InAs/GaAs.
引用
收藏
页码:469 / 478
页数:10
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