Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design

被引：12
作者：
Wetzel, C
Amano, H
Akasaki, I
机构：
[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期
关键词：
GaN; GaInN; piezoelectric effect; electric field; Franz-Keldysh effect; electroreflection;
D O I：
10.1143/JJAP.39.2425
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polarization properties of doped Ga0.85In0.15N/GaN multiple quantum well structures are investigated under the application of external bias voltages. From Franz-Keldysh oscillations at and above the barrier band edge, the electric field in the barriers is determined. From the bias dependence, we derive the polarity and an offset of 0.51 MV/cm of the internal field. This is attributed to the piezoelectric polarization in the well region of magnitude P = -e(z) (0.009 - 0.014) C/m(2). We find that Si doping at typical concentrations of 3 x 10(18) cm(-3) cannot screen the polarization effects on the length scale typical for quantum wells and superlattices but induces large potential barriers.
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页码：2425 / 2427
页数：3
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