Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon

被引:2
作者
Neimash, V. B. [1 ]
Nikolenko, A. S. [2 ]
Strelchuk, V. V. [2 ]
Shepeliavyi, P. Ye [2 ]
Litvinchuk, P. M. [1 ]
Melnyk, V. V. [1 ]
Olhovik, I., V [1 ]
机构
[1] NAS Ukraine, Inst Phys, 46 Prospect Nauky, UA-03680 Kiev, Ukraine
[2] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03680 Kiev, Ukraine
关键词
amorphous silicon; crystallization; tin; qq photoionization; electron-phonon interaction; solar cells; TEMPERATURE-DEPENDENCE; RAMAN-SPECTRA; SOLAR; DEPOSITION;
D O I
10.15407/spqeo22.02.206
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of laser light intensity and temperature on the induced tin crystallization of amorphous silicon has been investigated using the methods of Raman scattering and optical microscopy. The existence of non-thermal mechanisms of the laser light influence on formation of silicon nanocrystals and their Raman spectra has been experimentally demonstrated. Photoionization of silicon and electron-phonon interaction are considered as possible reasons for the detected effects. The prospects of their application in new technologies providing production of nano-silicon films for solar cells have been discussed.
引用
收藏
页码:206 / 214
页数:9
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