Influence of plasma pretreatment on the performance of industrial tungsten carbide coatings deposited at low temperature on 100Cr6 bearing steel substrates

被引：12

作者：

Drabik, Martin ^{[1
]}

Ballo, Vladimir ^{[1
]}

Truchly, Martin ^{[2
]}

Frkan, Juraj ^{[1
]}

Roch, Tomas ^{[2
]}

Kvetkova, Lenka ^{[3
]}

Satrapinskyy, Leonid ^{[2
]}

Kus, Peter ^{[2
]}

机构：

[1] Staton Ltd, Sadova 1148, Turany 03853, Slovakia

[2] Comenius Univ, Fac Math Phys & Informat, Dept Expt Phys, Bratislava 84248, Slovakia

[3] Slovak Acad Sci, Inst Mat Res, Watsonova 47, Kosice 04001, Slovakia

来源：

SURFACE & COATINGS TECHNOLOGY | 2016年 / 293卷

关键词：

Adhesion; HiPIMS; Substrate pretreatment; Tribological coating; Tungsten carbide; C-H; FILMS; ADHESION; CARBON; INTERLAYERS; ARC;

D O I：

10.1016/j.surfcoat.2016.01.035

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The study concerns different surface pretreatment procedures of the 100Cr6 bearing steel substrates using DC magnetron sputtering and high-power impulse magnetron sputtering. The influence of the pretreatment technique on structure, adhesion and overall performance of the deposited tungsten carbide tribological coatings is characterized. The substrate pretreatment and deposition processes are maintained at process temperatures lower than 180 degrees C in order not to affect the intrinsic structural and mechanical properties of the bearing steel substrates. It is shown that the pretreatment method does not influence the structure and composition of the coatings. On the other hand, it strongly affects the surface structure and more important the adhesion and the tribological properties of the coatings. It is shown that the high-power impulse magnetron sputtering technique in combination with a high bias voltage can be a valuable tool for substrate surface pretreatment to obtain a good adhesion even at low process temperature. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：2 / 9

页数：8

共 33 条

[1] Influence of CH4 partial pressure on the microstructure of sputter-deposited tungsten carbide thin films [J].