Soliton delay line based on a semiconductor superlattice

被引：16

作者：

Kryuchkov, SV ^{[1
]}

Kaplya, EV ^{[1
]}

机构：

[1] Volgograd State Tech Univ, Volzhskii Polytech Inst, Volzhskii 404121, Volgograd Oblas, Russia

来源：

TECHNICAL PHYSICS | 2003年 / 48卷 / 05期

关键词：

Soliton; Delay Line; Nonlinear Medium; Current Passing; Soliton Pulse;

D O I：

10.1134/1.1576470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of delay line intended for soliton pulses is proposed. As a nonlinear medium, a semiconductor superlattice is taken. Solitons that propagate along the superlattice layers are confined in cells bounded by transverse inhomogeneity layers. Solitons are confined and released with the help of an external electric current passing inside the cell. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：576 / 579

页数：4

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