Field-effect optical modulation based on epsilon-near-zero conductive oxide

被引：25

作者：

Shi, Kaifeng ^{[1
]}

Lu, Zhaolin ^{[1
]}

机构：

[1] Rochester Inst Technol, Microsyst Engn, Kate Gleason Coll Engn, Rochester, NY 14623 USA

来源：

OPTICS COMMUNICATIONS | 2016年 / 370卷

基金：

美国国家科学基金会;

关键词：

Electro-optical Modulator; Epsilon-Near-Zero (ENZ) Material; Indium Tin Oxide (ITO); METAMATERIAL; INDEX; PROPAGATION; REFRACTION;

D O I：

10.1016/j.optcom.2016.02.062

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Epsilon-near-zero (ENZ, dielectric constant epsilon(r)approximate to 0) materials have attracted significant research interest, however, their applications in the near-infrared regime are very limited. Conductive oxide (COx), owing to its moderate carrier concentration, is a candidate for ENZ material at telecom wavelengths based on the Drude model. Herein, we report an indium tin oxide (ITO) thin film as an ENZ material with crossover wavelength, where real part of permittivity crosses zero, and enhanced light absorption at telecom wavelengths. We also report the investigation of electro-absorption modulation based on a metal-oxide semiconductor (MOS)-like structure, more specifically a metal-oxide-ITO stack, where ITO works around ENZ. Based on the attenuated total reflectance (ATR) configuration, our test shows great promise for future electro-optical (EO) modulators. The operation speed of the MOS-like structure is limited mainly by RC delay. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：22 / 28

页数：7

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