Crystallographic orientation errors in mechanical exfoliation

被引:4
作者
Kolumbus, Y. [1 ]
Zalic, A. [1 ]
Fardian-Melamed, N. [2 ]
Barkay, Z. [3 ]
Rotem, D. [2 ]
Porath, D. [2 ,4 ]
Steinberg, H. [1 ,4 ]
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-9190401 Jerusalem, Israel
[2] Hebrew Univ Jerusalem, Phys Chem Dept, IL-9190401 Jerusalem, Israel
[3] Tel Aviv Univ, Wolfson Appl Mat Res Ctr, IL-6997801 Ramat Aviv, Israel
[4] Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-9190401 Jerusalem, Israel
基金
以色列科学基金会;
关键词
graphene; exfoliation; orientation; van der Waals devices; ANGLE GRAPHENE SUPERLATTICES; HETEROSTRUCTURES;
D O I
10.1088/1361-648X/aae877
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We evaluate the effect of mechanical exfoliation of van der Waals materials on crystallographic orientations of the resulting flakes. Flakes originating from a single crystal of graphite, whose orientation is confirmed using STM, are studied using facet orientations and electron back-scatter diffraction (EBSD). While facets exhibit a wide distribution of angles after a single round of exfoliation (sigma similar to 5 degrees), EBSD shows that the true crystallographic orientations are more narrowly distributed (sigma similar to 1.5 degrees), and facets have an approximately 3 degrees error from the true orientation. Furthermore, we find that the majority of graphite fractures are along armchair lines, and that the cleavage process results in an increase of the zigzag lines portion. Our results place values on the rotation caused by a single round of the exfoliation process, and suggest that when a 1-2 degree precision is necessary, the orientation of a flake can be gauged by the orientation of the macroscopic single crystal from which it was exfoliated.
引用
收藏
页数:7
相关论文
共 23 条
[1]   Nature of Graphene Edges: A Review [J].
Acik, Muge ;
Chabal, Yves J. .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
[2]   Superlattice-Induced Insulating States and Valley-Protected Orbits in Twisted Bilayer Graphene [J].
Cao, Y. ;
Luo, J. Y. ;
Fatemi, V. ;
Fang, S. ;
Sanchez-Yamagishi, J. D. ;
Watanabe, K. ;
Taniguchi, T. ;
Kaxiras, E. ;
Jarillo-Herrero, P. .
PHYSICAL REVIEW LETTERS, 2016, 117 (11)
[3]   Correlated insulator behaviour at half-filling in magic-angle graphene superlattices [J].
Cao, Yuan ;
Fatemi, Valla ;
Demir, Ahmet ;
Fang, Shiang ;
Tomarken, Spencer L. ;
Luo, Jason Y. ;
Sanchez-Yamagishi, Javier D. ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Kaxiras, Efthimios ;
Ashoori, Ray C. ;
Jarillo-Herrero, Pablo .
NATURE, 2018, 556 (7699) :80-+
[4]   Unconventional superconductivity in magic-angle graphene superlattices [J].
Cao, Yuan ;
Fatemi, Valla ;
Fang, Shiang ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Kaxiras, Efthimios ;
Jarillo-Herrero, Pablo .
NATURE, 2018, 556 (7699) :43-+
[5]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[6]   Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions [J].
Dvir, T. ;
Massee, F. ;
Attias, L. ;
Khodas, M. ;
Aprili, M. ;
Quay, C. H. L. ;
Steinberg, H. .
NATURE COMMUNICATIONS, 2018, 9
[7]   Van der Waals heterostructures [J].
Geim, A. K. ;
Grigorieva, I. V. .
NATURE, 2013, 499 (7459) :419-425
[8]   Graphene at the Edge: Stability and Dynamics [J].
Girit, Caglar Oe ;
Meyer, Jannik C. ;
Erni, Rolf ;
Rossell, Marta D. ;
Kisielowski, C. ;
Yang, Li ;
Park, Cheol-Hwan ;
Crommie, M. F. ;
Cohen, Marvin L. ;
Louie, Steven G. ;
Zettl, A. .
SCIENCE, 2009, 323 (5922) :1705-1708
[9]   Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure [J].
Hunt, B. ;
Sanchez-Yamagishi, J. D. ;
Young, A. F. ;
Yankowitz, M. ;
LeRoy, B. J. ;
Watanabe, K. ;
Taniguchi, T. ;
Moon, P. ;
Koshino, M. ;
Jarillo-Herrero, P. ;
Ashoori, R. C. .
SCIENCE, 2013, 340 (6139) :1427-1430
[10]   Ab initio study of graphite prismatic surfaces [J].
Incze, A ;
Pasturel, A ;
Chatillon, C .
APPLIED SURFACE SCIENCE, 2001, 177 (04) :221-225