Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

被引：63

作者：

Gu, Pei-Yang ^{[1
,2
]}

Gao, Junkuo ^{[3
]}

Lu, Cai-Jian ^{[1
]}

Chen, Wangqiao ^{[2
,4
]}

Wang, Chengyuan ^{[2
]}

Li, Gang ^{[2
]}

Zhou, Feng ^{[1
]}

Xu, Qing-Feng ^{[1
]}

Lu, Jian-Mei ^{[1
]}

Zhang, Qichun ^{[2
,4
]}

机构：

[1] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[3] Zhejiang Sci Tech Univ, Coll Mat & Text, Key Lab Adv Text Mat & Mfg Technol, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China

[4] Nanyang Technol Univ, Inst Sports Res, Singapore 639798, Singapore

来源：

MATERIALS HORIZONS | 2014年 / 1卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; CLEAN REACTION STRATEGY; PHYSICAL-PROPERTIES; N-HETEROACENES; 2-PHOTON ABSORPTION; ORGANIC MATERIALS; SMALL-MOLECULE; DEVICES; BEHAVIOR;

D O I：

10.1039/c4mh00022f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To achieve ultra-high density memory devices with a capacity of 3(n) or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ON1/OFF current ratios of 10(8.7)/10(4.2)/1, low switching threshold voltage of -1.80 V/-2.87 V, and good stability for these three states.

引用

页码：446 / 451

页数：6

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