Segregation coefficient of impurities at polycrystalline Si/HfO2 interfaces

被引：0

作者：

Suzuki, K ^{[1
]}

Minakata, H ^{[1
]}

Sakota, T ^{[1
]}

Yamaguchi, M ^{[1
]}

Tamura, Y ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Silicon Labs Ltd, Atsugi, Kanagawa 24301971, Japan

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 01期

关键词：

HfO2; segregation;

D O I：

10.1016/j.sse.2004.06.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We evaluated the segregation coefficient m of B, P, and As at the polycrystalline Si/HfO2 interface. The m values of B, P, and As are between 0.3 and 1 and are similar to that of B at the polycrystalline Si/SiO2 interface. The m value of P at the polycrystalline Si/ SiO2 interface is around 1000, and this high value largely keeps P from penetrating the thin gate SiO2. Therefore, the penetration of B, P and As through a poly-Si/HfO2 layer is expected to be significant since the diffusion coefficients of P and As in HfO2 are also high, making the use of a cover layer indispensable for p(+) and n(+) polycrystalline silicon gate devices. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：137 / 139

页数：3

共 45 条

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