Vapour transport growth of ZnO nanorods

被引:17
|
作者
Mofor, A. C.
Bakin, A. S.
Elshaer, A.
Fuhrmann, D.
Bertram, F.
Hangleiter, A.
Christen, J.
Waag, A.
机构
[1] Tech Univ Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany
[2] Tech Univ Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany
[3] Univ Magdeburg, Dept Solid State Phys, D-39106 Magdeburg, Germany
来源
关键词
D O I
10.1007/s00339-007-3961-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The fabrication of low-dimensional ZnO structures has attracted enormous attention as such nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Many reported fabrication methods, especially for ZnO nanorods are mostly based on catalyst-assisted growth techniques that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on catalyst-free vapour-phase epitaxy growth of ZnO nanorods on 6H-SiC and (11-20)Al2O3 using purely elemental sources at relatively low temperatures and growth pressure. ZnO nanorods with widths of 80-900 nm and lengths of up to 12 mu m were obtained. Nanorod density on the order of 10(9) cm(-2) with homogenous luminescence and high purity was also noted.
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页码:17 / 20
页数:4
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