Polycrystalline silicon thin films obtained by Ni-induced crystallization on glass substrate

被引：6
作者：
Dimova-Malinovska, D
Angelov, O
Sendova-Vassileva, M
Kamenova, M
Pivin, JC
Pramatarova, L
机构：
[1] BAS, Cent Lab Solar Energy & New Energy Sources, Sofia 1784, Bulgaria
[2] CNRS, CSNSM, F-91405 Orsay, France
[3] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
来源：
VACUUM | 2004年 / 76卷 / 2-3期
关键词：
polycrystalline silicon; metal-induced crystallization; Raman spectroscopy; Rutherford back-scattering;
D O I：
10.1016/j.vacuum.2004.07.057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of high-quality polycrystalline silicon (poly Si) on different substrates are of interest for manufacturing thin film transistors, solar cells, and image sensors. In this study, we present the results of an investigation of poly Si films on glass, formed by nickel-induced crystallization. The process is based on isothermal annealing in air at 550 and 560degreesC of co-sputtered Ni + Si films deposited on glass at different substrate temperatures, with and without the application of an electric field to the films. The poly Si films were investigated by Raman spectroscopy and Rutherford back-scattering. It was established that the substrate temperature and the Ni-concentration in the precursor amorphous Si + Ni films are important parameters for nickel-induced crystallization. (C) 2004 Published by Elsevier Ltd.
引用
收藏
页码：151 / 154
页数：4
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