Optimized ultra-thin Manganin alloy Passivated fine-pitch damascene compatible Cu-Cu bonding at sub 200°C for 3D IC Integration

被引:0
作者
Panigrahi, Asisa Kumar [1 ]
Kumar, C. Hemanth [1 ]
Ghosh, Tamal [1 ]
Vanjari, Siva Rama Krishna [1 ]
Singh, Shiv Govind [1 ]
机构
[1] Indian Inst Technol Hyderabad, Dept Elect Engn, Kandi 502285, Sangareddy, India
来源
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年
关键词
TI PASSIVATION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300 degrees C) but also reduces the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrate an ultra-fine pitch Cu-Cu thermocompression bonding using an optimized ultra-thin damascene compatible Manganin metal alloy passivation. This engineering surface passivation approach has led to high quality bonding at sub 200 degrees C temperature and a nominal contact force of 4kN. Furthermore, electrical characterization using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test and the results indicate excellent stability without electrical performance degradation. This practical finding has immense potential to leads into practical realization of 3D IC integration.
引用
收藏
页码:35 / 35
页数:1
相关论文
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