Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H2 downstream plasma

被引：23

作者：

Vanstreels, Kris ^{[1
]}

Urbanowicz, Adam M. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 01期

关键词：

curing; low-k dielectric thin films; mechanical properties; nanoindentation; plasma CVD; silicon compounds; MECHANICAL-PROPERTIES; ELASTIC-MODULUS; INDENTATION; HARDNESS; GLASSES; DAMAGE; LOAD;

D O I：

10.1116/1.3293200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of He/H-2 downstream plasma (DSP) on the mechanical properties of plasma enhanced chemical vapor deposition SiCOH low-k films was studied using nanoindentation (NI) with the continuous-stiffness measurement technique. Furthermore, the main requirements for reliable NI measurements on plasma-modified low-k films are discussed. The results show that the mechanical properties of these films are intimately linked with their porosity and that exposure to He/H-2 DSP causes a change in both the porosity and the mechanical properties of the films. This change is related to the removal of porogen residue formed during the ultraviolet curing of the low-k film.

引用

页码：173 / 179

页数：7

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