Transport Properties of an Electron-Hole Bilayer in Contact with a Superconductor Hybrid Junction

被引:4
|
作者
Bercioux, D. [1 ,2 ]
Klapwijk, T. M. [4 ]
Bergeret, F. S. [1 ,3 ]
机构
[1] DIPC, Manuel de Lardizbal 4, E-20018 San Sebastian, Spain
[2] Ikerbasque, Basque Fdn Sci, Bilbao 48011, Basque Country, Spain
[3] Univ Basque Country, Ctr Mixto CSIC, Ctr Fis Mat CFM MPC, Donostia San Sebastian 20018, Basque Country, Spain
[4] Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands
基金
欧洲研究理事会;
关键词
EXCITONIC INSULATOR; SEMIMETAL;
D O I
10.1103/PhysRevLett.119.067001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semimetal with two electronic bands. We assume that in the region between the contacts the system hosts an exciton condensate described by a BCS-like model with a gap Gamma in the quasiparticle density of states. We first discuss how the subgap electronic transport through the junction is mainly governed by the interplay between two kinds of reflection processes at the interfaces: the standard Andreev reflection at the interface between the superconductor and the exciton condensate, and a coherent crossed reflection at the semimetal-exciton-condensate interface that converts electrons from one layer into the other. We show that the differential conductance of the junction shows a minimum at voltages of the order of Gamma/e. Such a minimum can be seen as a direct hallmark of the existence of the gapped excitonic state.
引用
收藏
页数:5
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