Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

被引：52

作者：

Dewan, Sheetal ^{[1
]}

Tomar, Monika ^{[2
]}

Tandon, R. P. ^{[1
]}

Gupta, Vinay ^{[1
]}

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

[2] Univ Delhi, Dept Phys, Miranda House, Delhi 110007, India

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 21期

关键词：

TRANSPORT-PROPERTIES; SOLAR-CELLS; ZINC-OXIDE; THIN-FILMS; FABRICATION; ELECTRODES;

D O I：

10.1063/1.4984580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mixed transition metal oxide, zinc doped NiO, ZnxNi1-xO(x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 degrees C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour. Published by AIP Publishing.

引用

页数：9

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