Numerical simulation of the CVD of SiC using different kinetic models

The CVD of SiC from methyltrichlorosilane/hydrogen mixtures (MTS/H-2) is one of the most investigated CVD processes [1-9]. The actual formal kinetic models describe the deposition process usually at fixed total pressure and limited temperature ranges, neglecting the change in the gas phase composition. In the previous paper [5] we discussed the gas phase composition, kinetics, fluid dynamics and mass transport in a hot wall reactor system at different total pressures using a simple power rate law. The present work is focussed to the composition of deposited SiC at different total pressures, temperatures and H-2/MTS ratios. The comparison between the power rate law and a hyperbolic rate equation is discussed. A 2D computational fluid dynamics model was used for the simulation of the species transport. The results of this simulations are discussed with respect to the reaction kinetic model and the quality of the fit.