Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy

被引：3

作者：

Wang, Yang ^{[1
,2
]}

Hu, Shuhong ^{[2
]}

Xie, Hao ^{[1
,2
]}

Lin, Hongyu ^{[1
,2
]}

Lu, Hongbo ^{[2
]}

Wang, Chao ^{[1
,2
]}

Sun, Yan ^{[2
]}

Dai, Ning ^{[2
]}

机构：

[1] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

INFRARED PHYSICS & TECHNOLOGY | 2018年 / 91卷

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

Type-II Gasb QDs; Room-temperature; PL spectra; Activation energy; LOCALIZATION;

D O I：

10.1016/j.infrared.2018.03.023

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaSb quantum dots (QDs) with an areal density of similar to 1 x 10(10) cm(-2) are successfully grown by the modified (rapid slider) liquid phase epitaxy technique. The morphology of the QDs has been investigated by scanning electron microscope (SEM) and atom force microscope (AFM). The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright roomtemperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-ll alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power. From the temperature-dependence PL spectra, the activation energy of QDs is determined to be 111 meV. (C) 2018 Published by Elsevier B.V.

引用

收藏

页码：68 / 71

页数：4

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