A low-phase noise LC-QVCO in CMOS technology

被引:28
作者
Choi, HC [1 ]
Shin, SB [1 ]
Lee, SG [1 ]
机构
[1] Informat & Commun Univ, Taejon 305714, South Korea
关键词
1/f noise up-conversion; complementary metal oxide semiconductor (CMOS); phase noise; quadrature voltagecontrolled oscillator (QVCO); RF; source-injection parallel coupled; quadrature VCO (SIPC-QVCO);
D O I
10.1109/LMWC.2004.834553
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a source-injection parallel coupled (SIPC) quadrature voltage-controlled oscillator (QVCO) topology. In the proposed SIPC-QVCO, compare to the conventional parallel-coupled LC-QVCO (P-QVCO), the coupling transistors are configured in a way so that the 1/f noise, contributed by the coupling transistors at the output, can be avoided. The newly proposed SIPC-QVCO and conventional P-QVCO are fabricated based on 0.25 mum CMOS technology. The phase noise of SIPC-QVCO measured at 1.5 GHz shows more than 10 dB improvement than that of the conventional P-QVCO over the offset frequency range of 10 K similar to 1 MHz while dissipating the same amount of power.
引用
收藏
页码:540 / 542
页数:3
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