Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser

被引：56

作者：

Garcia, JC ^{[1
]}

Rosencher, E ^{[1
]}

Collot, P ^{[1
]}

Laurent, N ^{[1
]}

Guyaux, JL ^{[1
]}

Vinter, B ^{[1
]}

Nagle, J ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a two-color (956 and 985 nm) InGaAs/AlGaAs laser structure epitaxially stacked through a low-resistance (10(-5)-10(-4) Ohm cm(2)) Esaki junction, exhibiting two threshold characteristics. It is shown that this structure can be considered as a bipolar cascade laser. (C) 1997 American Institute of Physics. [S0003-6951(97)00952-2].

引用

页码：3752 / 3754

页数：3

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