Tungsten chemical mechanical polishing

被引:39
作者
Elbel, N [1 ]
Neureither, B [1 ]
Ebersberger, B [1 ]
Lahnor, P [1 ]
机构
[1] Siemens AG, Components Grp, D-81739 Munich, Germany
关键词
D O I
10.1149/1.1838533
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
After chemical mechanical polishing (CMP) of oxides became a standard method for global planarization, the polishing of metals is now being embraced by manufacturing. Although tungsten CMP has been used for subhalf-micron technologies for quite some time, there is still a lack of theoretical understanding and modeling of the metal CMP processes. This paper presents a mathematical approach to describe erosion and dishing for tungsten CMP. The model, which represents the pad by a network of springs, simulates the profile of a dished tungsten line. The calculated data are then compared with experimental data.
引用
收藏
页码:1659 / 1664
页数:6
相关论文
共 7 条
  • [1] Bohr MT, 1996, SOLID STATE TECHNOL, V39, P105
  • [2] CHEMICAL-MECHANICAL POLISHING FOR FABRICATING PATTERNED W METAL FEATURES AS CHIP INTERCONNECTS
    KAUFMAN, FB
    THOMPSON, DB
    BROADIE, RE
    JASO, MA
    GUTHRIE, WL
    PEARSON, DJ
    SMALL, MB
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) : 3460 - 3465
  • [3] COPPER METALLIZATION FOR ULSI AND BEYOND
    MURARKA, SP
    HYMES, SW
    [J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1995, 20 (02) : 87 - 124
  • [4] MODELING OF CHEMICAL-MECHANICAL POLISHING - A REVIEW
    NANZ, G
    CAMILLETTI, LE
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1995, 8 (04) : 382 - 389
  • [5] Preston F.W., 1927, J SOC GLASS TECHNOLO, V11, P214
  • [6] RUTTEN M, 1995, SEMICONDUCTOR INT, V9, P123
  • [7] Singer P., 1996, Semiconductor International, V19, P88