Negative magnetoresistance in transverse and longitudinal magnetic fields in Bi nanowires

被引：4

作者：

Nikolaeva, A. A. ^{[1
,2
]}

Konopko, L. A. ^{[1
,2
]}

Huber, T. E. ^{[3
]}

Sineavsky, E. P. ^{[4
]}

Khamidullin, R. A. ^{[4
]}

Tsurkan, A. C. ^{[1
]}

机构：

[1] ASM, Inst Elect Engn & Ind Technol, MD-2028 Chishinau, MD, Moldova

[2] Int Lab High Magnet Fields & Low Temp, Wroclaw, Poland

[3] Howard Univ, Dept Chem, Washington, DC 20059 USA

[4] ASM, Inst Appl Phys, MD-2028 Chishinau, MD, Moldova

来源：

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 2 | 2009年 / 150卷

关键词：

TRANSPORT-PROPERTIES; BISMUTH;

D O I：

10.1088/1742-6596/150/2/022065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work the measurements of longitudinal (LMR) and transverse magnetoresistance (TMR) in Bi wires with 50<d<500 nm in the interval 4.2 - 300 K and magnetic field up to 14 T were carried out. Was shown that, the maximum on LMR at H parallel to I is suppressed due to quantum size effect. For the first time it was found that the field dependence of TMR R(H) at I perpendicular to H) in Bi wires with d<80 nm contains the negative region R(H) < R-0 at T<5 K. This result was unexpected, because it is known that in bulk Bi samples the "giant" increase of magnetoresistance in the case H I is observed. We calculate the conductivity of nanowires in longitudinal and transverse magnetic fields on the basis of the Cubo formula for the conductivity. We use the model of quantum wires with a parabolic potential in the plane orthogonal to the axis of the size-quantized system. According to the model of such TMR and LMR were experimentally observed in the Bi quantum wires (QW) with d<80nm.

引用

页数：4