Electronic structure evolution of single bilayer Bi(111) film on 3D topological insulator Bi2SexTe3-x surfaces

被引：21

作者：

Lei, Tao ^{[1
]}

Jin, Kyung-Hwan ^{[2
]}

Zhang, Nian ^{[1
]}

Zhao, Jia-Li ^{[1
]}

Liu, Chen ^{[1
]}

Li, Wen-Jie ^{[3
]}

Wang, Jia-Ou ^{[1
]}

Wu, Rui ^{[1
]}

Qian, Hai-Jie ^{[1
]}

Liu, Feng ^{[2
,4
]}

Ibrahim, Kurash ^{[1
]}

机构：

[1] Chinese Acad Sci, Insitute High Energy Phys, Beijing 100049, Peoples R China

[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

[3] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China

[4] Collaborat Innovat Ctr Quantum, Matter, Beijing 100084, Peoples R China

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2016年 / 28卷 / 25期

关键词：

electronic structure; Bi(111) film; ARPES; interfacial interaction; topological insulator; DIRAC CONE; THIN-FILMS; BI2TE3; SI;

D O I：

10.1088/0953-8984/28/25/255501

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic state evolution of single bilayer (1BL) Bi(111) deposited on three-dimensional (3D) Bi(2)SexTe(3- x) topological insulators at x = 0, 1.26, 2, 2.46, 3 is systematically investigated by angle-resolved photoemission spectroscopy (ARPES). Our results indicate that the electronic structures of epitaxial Bi films are strongly influenced by the substrate especially the topmost sublayer near the Bi films, manifesting in two main aspects. First, the Se atoms cause a stronger charge transfer effect, which induces a giant Rashba-spin splitting, while the low electronegativity of Te atoms induces a strong hybridization at the interface. Second, the lattice strain notably modifies the band dispersion of the surface bands. Furthermore, our experimental results are elucidated by first-principles band structure calculations.

引用

页数：8

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