A Scalable Nonlinear Model for GaN HEMTs with Self-Heating Effect

被引：0

作者：

Li, Zhao ^{[1
]}

Feng, Feng ^{[1
]}

Li, Mengjie ^{[1
]}

Wang, Xu ^{[1
]}

Wang, Lulu ^{[2
]}

Fang, Wenrao ^{[2
]}

机构：

[1] Tianjin Univ, Sch Microelectron, Tianjin, Peoples R China

[2] Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian, Shaanxi, Peoples R China

来源：

2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT) | 2022年

关键词：

GaN HEMTs; scalable model; nonlinear model; self-heating effect;

D O I：

10.1109/ICMMT55580.2022.10022916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nonlinear scalable model for Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) including the self-heating effect is described in this paper. A modified Angelov model is used as the reference. Nonlinear scaling rules for I-ds R-th and other model parameters are presented. The accuracy of the reference model and the effectiveness of the scaling rule is verified by 0.25 um GaN HEMTs.

引用

页数：3

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