Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers

被引：32

作者：

Bennett, BR ^{[1
]}

Yang, MJ ^{[1
]}

Shanabrook, BV ^{[1
]}

Boos, JB ^{[1
]}

Park, D ^{[1
]}

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sheet carrier concentrations in quantum wells of InAs clad by AlSb were enhanced by modulation doping with very thin (9-12 Angstrom) remote InAs(Si) donor layers. The growth temperature of the donor layers was a key parameter, with relatively low temperatures required to minimize Si segregation into the AlSb. Sheet carrier concentrations as high as 3.2X10(12)/cm(2) and 5.6X10(12)/cm(2) were achieved by single-and double-sided modulation doping, respectively. High electron mobility transistors fabricated using the modulation doped structure exhibited a unity current gain cut-off frequency of 60 GHz for a 0.5 mu m gate length at a source-drain voltage of 0.5 V. [S0003-6951(98)01010-9].

引用

页码：1193 / 1195

页数：3

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