Optimization and characterization of NiO thin films prepared via NSP technique and its P-N junction diode application

被引：9
作者：
Saju, Joseph [1 ]
Balasundaram, O. N. [2 ]
机构：
[1] Bharathiar Univ, Res & Dev Ctr, Coimbatore 641046, Tamil Nadu, India
[2] PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, India
来源：
MATERIALS SCIENCE-POLAND | 2019年 / 37卷 / 03期
关键词：
thin films; X-ray diffraction; optical and electrical properties; CURRENT-VOLTAGE CHARACTERISTICS; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES;
D O I：
10.2478/msp-2019-0049
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present work reports on the optimization of substrate temperature, molar concentration and volume of the solution of nickel oxide (NiO) thin films prepared by nebulizer spray pyrolysis (NSP) technique. NiO films were optimized and characterized by XRD, SEM, EDX, UV-Vis and I-V measurements. Based on XRD analysis, the molar concentration, volume of solution and substrate temperature of the prepared NiO films were optimized as 0.20 M, 5 mL and 450 degrees C for P-N diode applications. The XRD pattern of the optimized NiO film revealed cubic structure. The surface morphological variations and elemental composition were confirmed by SEM and EDX analysis. The optical properties were studied with UV-Vis spectrophotometer and the minimum band gap value was 3.67 eV for 450 degrees C substrate temperature. Using J-V characteristics, the diode parameters: ideality factor n and barrier height phi(b) values of p-NiO/N-Si diode prepared at optimum conditions, i.e. 450 degrees C, 0.2 M, 5 mL, were evaluated in dark and under illumination.
引用
收藏
页码：338 / 346
页数：9
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