Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

被引：15
作者：
Lei, W. [1 ,2 ,3 ]
Notthoff, C. [1 ,2 ]
Lorke, A. [1 ,2 ]
Reuter, D. [4 ]
Wieck, A. D. [4 ]
机构：
[1] Univ Duisburg Essen, Fachbereich Phys, D-47048 Duisburg, Germany
[2] Univ Duisburg Essen, CeNIDE, D-47048 Duisburg, Germany
[3] Australian Natl Univ, Dept Elect Mat Engn, RSPE, Canberra, ACT 0200, Australia
[4] Ruhr Univ Bochum, Fak Phys, D-44780 Bochum, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 03期
基金：
澳大利亚研究理事会;
关键词：
band structure; conduction bands; gallium arsenide; galvanomagnetic effects; ground states; III-V semiconductors; indium compounds; numerical analysis; self-assembly; semiconductor quantum dots; DOTS; BAND;
D O I：
10.1063/1.3293445
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state transition from l=0 into l=-1, and a ground state transition from l=-1 into l=-2, respectively. Furthermore, using a combination of capacitance-voltage spectroscopy and one-dimensional numerical simulations, the conduction band structure of these InGaAs quantum rings was determined.
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页数：3
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共 17 条
  • [1] Valence-band structure of self-assembled InAs quantum dots studied by capacitance spectroscopy
    Bock, C
    Schmidt, KH
    Kunze, U
    Malzer, S
    Döhler, GH
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (13) : 2071 - 2073
  • [2] ELECTRON-ELECTRON INTERACTION AND THE PERSISTENT CURRENT IN A QUANTUM RING
    CHAKRABORTY, T
    PIETILAINEN, P
    [J]. PHYSICAL REVIEW B, 1994, 50 (12): : 8460 - 8468
  • [3] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS
    DREXLER, H
    LEONARD, D
    HANSEN, W
    KOTTHAUS, JP
    PETROFF, PM
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (16) : 2252 - 2255
  • [4] Modeling of InAs/GaAs quantum ring capacitance spectroscopy in the nonparabolic approximation
    Filikhin, I.
    Suslov, V. M.
    Vlahovic, B.
    [J]. PHYSICAL REVIEW B, 2006, 73 (20)
  • [5] Intermixing and shape changes during the formation of InAs self-assembled quantum dots
    García, JM
    MedeirosRibeiro, G
    Schmidt, K
    Ngo, T
    Feng, JL
    Lorke, A
    Kotthaus, J
    Petroff, PM
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (14) : 2014 - 2016
  • [6] Determination of the energy levels on InAs quantum dots with respect to the GaAs conduction band
    Granados, D
    García, JM
    [J]. NANOTECHNOLOGY, 2005, 16 (05) : S282 - S284
  • [7] Oscillatory persistent currents in self-assembled quantum rings
    Kleemans, N. A. J. M.
    Bominaar-Silkens, I. M. A.
    Fomin, V. M.
    Gladilin, V. N.
    Granados, D.
    Taboada, A. G.
    Garcia, J. M.
    Offermans, P.
    Zeitler, U.
    Christianen, P. C. M.
    Maan, J. C.
    Devreese, J. T.
    Koenraad, P. M.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (14)
  • [8] Ledentsov N. N, 1999, QUANTUM DOT HETEROST
  • [9] III-V semiconductor nano-rings
    Lee, BC
    Voskoboynikov, O
    Lee, CP
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (1-2) : 87 - 91
  • [10] Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy
    Lei, W.
    Offer, M.
    Lorke, A.
    Notthoff, C.
    Meier, C.
    Wibbelhoff, O.
    Wieck, A. D.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (19)
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