A 1.24 μA Quiescent Current NMOS Low Dropout Regulator With Integrated Low-Power Oscillator-Driven Charge-Pump and Switched-Capacitor Pole Tracking Compensation

被引：66

作者：

Magod, Raveesh ^{[1
]}

Bakkaloglu, Bertan ^{[1
]}

Manandhar, Sanjeev ^{[2
]}

机构：

[1] Arizona State Univ, Sch Elect & Comp Engn, Tempe, AZ 85287 USA

[2] Texas Instruments Inc, Tucson, AZ 85711 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2018年 / 53卷 / 08期

关键词：

Adaptive biasing; dynamic biasing; hybrid biasing; low I-Q low dropout (LDO); NMOS LDO; on-demand buffer; relaxation oscillator; switched-capacitor tracking compensation; TRANSIENT-RESPONSE IMPROVEMENT; DESIGN; AMPLIFIER; BUFFER; LDO;

D O I：

10.1109/JSSC.2018.2820708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Supply regulation using low quiescent current linear regulators helps in extending the battery life of power aware applications with very long standby time. A 1.24 mu A quiescent current NMOS low dropout (LDO) that uses a hybrid bias current generator (HBCG) which boosts the bias current dynamically and adaptively to improve the transient response is presented in this paper. A bias-current scalable error amplifier with an on-demand pull-up/pull-down buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. A novel switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA with a low-ESR 1 mu F output capacitor. Designed in a 0.25 mu m CMOS process, the LDO has an output voltage range of 1-3 V, a dropout voltage of 240 mV, and a core area of 0.11 mm(2).

引用

页码：2356 / 2367

页数：12

共 27 条

[1] A transient-enhanced low-quiescent current low-dropout regulator with buffer impedance attenuation [J].

Al-Shyoukh, Mohammad ;

Lee, Hoi ;

Perez, Raul .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (08) :1732-1742

[2] Low-power high-speed current comparator design [J].

Banks, D. ;

Toumazou, C. .

ELECTRONICS LETTERS, 2008, 44 (03) :171-U2

[3] Always-On CMOS Image Sensor for Mobile and Wearable Devices [J].

Choi, Jaehyuk ;

Shin, Jungsoon ;

Kang, Dongwu ;

Park, Du-Sik .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (01) :130-140

[4] Analysis and Design of an Ultralow-Power CMOS Relaxation Oscillator [J].

Denier, Urs .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2010, 57 (08) :1973-1982

[5] A 6-μW Chip-Area-Efficient Output-Capacitorless LDO in 90-nm CMOS Technology [J].

Guo, Jianping ;

Leung, Ka Nang .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (09) :1896-1905

[6] A CMOS Low-Dropout Regulator With Dominant-Pole Substitution [J].

Ho, Marco ;

Guo, Jianping ;

Mak, Kai Ho ;

Goh, Wang Ling ;

Bu, Shi ;

Zheng, Yanqi ;

Tang, Xian ;

Leung, Ka Nang .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (09) :6362-6371

[7] Dynamic Bias-Current Boosting Technique for Ultralow-Power Low-Dropout Regulator in Biomedical Applications [J].

Ho, Marco ;

Leung, Ka Nang .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2011, 58 (03) :174-178

[8] A Low-Power Fast-Transient 90-nm Low-Dropout Regulator With Multiple Small-Gain Stages [J].

Ho, Marco ;

Leung, Ka Nang ;

Mak, Ki-Leung .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (11) :2466-2475

[9]

Kwok K. C., 2002, P IEEE INT S CIRC SY

[10]

Lam Y.-H., 2008, IEEE INT SOL STAT CI, P442, DOI [10.1109/ISSCC.2008.4523247, DOI 10.1109/ISSCC.2008.4523247]

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