Large strain with low hysteresis in Bi4Ti3O12 modified Bi1/2(Na0.82K0.18)1/2TiO3 lead-free piezoceramics

被引：55

作者：

Fan, Pengyuan ^{[1
]}

Zhang, Yangyang ^{[2
]}

Zhang, Qi ^{[3
]}

Xie, Bing ^{[1
]}

Zhu, Yiwei ^{[1
]}

Mawat, Mosin Ali ^{[1
]}

Ma, Weigang ^{[1
]}

Liu, Kai ^{[1
]}

Xiao, Jianzhong ^{[1
]}

Zhang, Haibo ^{[1
,4
]}

机构：

[1] Huazhong Univ Sci & Technol, Coll Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China

[2] Huanghe Sci & Technol Coll, Informat Engn Inst, Zhengzhou 450000, Henan, Peoples R China

[3] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

[4] Huazhong Univ Sci & Technol, Enginering Res Ctr Funct Ceram, Minist Educ, Wuhan 430074, Hubei, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2018年 / 38卷 / 13期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

Lead-free piezoceramics; Bismuth titanate; Phase transition; Electric-field-induced strain; Strain hysteresis; FIELD-INDUCED STRAIN; GIANT STRAIN; ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; STRUCTURE EVOLUTION; OPTICAL-PROPERTIES; FREE CERAMICS; TEMPERATURE; STABILITY; BEHAVIOR;

D O I：

10.1016/j.jeurceramsoc.2018.05.028

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In order to obtain BNT-based ceramic system with excellent electric-field-induced strain performance for actuator applications, a novel solid solution (100-x)Bi-1/2(Na0.82K0.12)(1/2)TiO3-xBi(4)Ti(3)O(12) ((100-x)BNKT-xBiT, x = 0-12 wt%) was designed and fabricated by solid state synthesis. The microstructure and related electrical properties of this material were systematically investigated. It was found that BiT is dissolved into the lattice structure of the BNKT, leading to a greater increase in the volatilization of Na and K, thus produce more A-site vacancies compared with the undoped BNKT. The 9 wt%BiT doped sample not only has sufficient A-site vacancies to destroy the long-range ferroelectric order of the base composition but also favors the presence of extremely stable relaxor phase at room temperature. Further, the ferroelectric-to-relaxor phase transition temperature TF-R can be effectively tuned to about 0 degrees C, giving rise to a large signal piezoelectric coefficient d*(33) of 485 pm/V with a small hysteresis eta of 23%.

引用

页码：4404 / 4413

页数：10

共 60 条

[1] Temperature- and Frequency-Dependent Properties of the 0.75Bi1/2Na1/2TiO3-0.25SrTiO3 Lead-Free Incipient Piezoceramic [J].