Low-frequency noise in structures with porous silicon in different gas media

被引：9

作者：

Mkhitaryan, Z. H. ^{[1
]}

Shatveryan, A. A. ^{[1
]}

Aroutiounian, V. M. ^{[1
]}

Ghulinyan, M. ^{[2
]}

Pavesi, L. ^{[2
]}

机构：

[1] Yerevan State Univ, Dept Phys Semicond & Microelect, 1 Alex Manoukian, Yerevan 375025, Armenia

[2] Trent Univ, Dept Phys, I-38050 Trento, Italy

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 6 | 2007年 / 4卷 / 06期

关键词：

D O I：

10.1002/pssc.200674372

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Noise properties of porous silicon/single-crystalline silicon structures under exposure to active gases are investigated for the first time. Current-voltage and noise characteristics of samples are measured. The Al/porous silicon/single-crystalline Si/Al sandwich-structures were placed in a special chamber and the influence of adsorption of various gases on low-frequency noise of the samples was revealed. The adsorption changes the dynamics of the interaction of charge carriers with traps, i.e. the noise characteristics of the samples. The results are encouraging for practical applications of porous silicon structures as gas sensors using measurements of low-frequency noise characteristics. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2063 / +

页数：2

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