Design of W-Band High-Isolation T/R Switch

被引：0

作者：

Chou, Chien-Chang ^{[1
]}

Huang, Shih-Chiao ^{[1
]}

Lai, Wen-Chian ^{[1
]}

Kuo, H. -C. ^{[1
]}

Chuang, Huey-Ru ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Comp & Commun Engn, 1 Univ Rd, Tainan 70101, Taiwan

来源：

2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2015年

关键词：

90-nm; body-floating; CMOS; high-isolation; leakage cancellation; T/R Switch; W-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a W-band CMOS SPDT high isolation T/R switch fabricated in 90nm CMOS. The switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity. To achieve high-isolation performance, the parallel inductor and leakage cancellation technique are adopted. The measurement results show that the designed switch has a good performance in the return loss, insertion loss and isolation in W-band 75-110GHz frequency band. Compared with reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz.

引用

页码：1084 / 1087

页数：4

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