Vertical nanowire light-emitting diode

被引：422

作者：

Könenkamp, R ^{[1
]}

Word, RC ^{[1
]}

Schlegel, C ^{[1
]}

机构：

[1] Portland State Univ, Dept Phys, Portland, OR 97201 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1836873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on SnO2-coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent SnO2 layer, while hole injection is mediated by a p-doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h. (C) 2004 American Institute of Physics.

引用

页码：6004 / 6006

页数：3

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