Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies

被引：21

作者：

Brothers, C ^{[1
]}

Pugh, R

Duggan, P

Chavez, J

Schepis, D

Yee, D

Wu, S

机构：

[1] USAF, Phillips Lab, Space Mission Technol Div, Kirtland AFB, NM 87117 USA

[2] IBM, Semicond Res & Dev Ctr, E Fishkill, NY 12533 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/23.659028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research foundry in un-hardened bulk and unhardened partially-depleted SOI silicon, are reported. The design and fabrication process, were optimized for highperformance and short access time using supply voltages of 2.5v for the 64K-bit and 1.8v for the 144K and 288K-bit test macro SRAMs.

引用

页码：2134 / 2139

页数：6