Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE

被引：0
|
作者：
Lum, RM [1 ]
McDonald, ML [1 ]
Bean, JC [1 ]
Vandenberg, J [1 ]
Pernell, TL [1 ]
Chu, SNG [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：578 / 581
页数：4
相关论文
共 50 条
  • [21] In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE
    Massoudi, I.
    Habchi, M. M.
    Rebey, A.
    El Jani, B.
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (03) : 498 - 505
  • [22] Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (001)
    Laifi, J.
    Chaaben, N.
    Bouazizi, H.
    Fourati, N.
    Zerrouki, C.
    El Gmili, Y.
    Bchetnia, A.
    Salvestrini, J. P.
    El Jani, B.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 86 : 472 - 482
  • [23] In-situ monitoring of the surface kinetics of the cubic GaN films in MOVPE using spectroscopic ellipsometry
    Taniyasu, Y
    Sato, E
    Sato, H
    Shimoyama, N
    Jia, A
    Shimotomai, M
    Kato, Y
    Kobayashi, M
    Yoshikawa, A
    Takahashi, K
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 74 - 77
  • [24] Monitoring the in-situ oxide growth on uranium by ultraviolet-visible reflectance spectroscopy
    Schweke, Danielle
    Maimon, Chen
    Chernia, Zelig
    Livneh, Tsachi
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (09)
  • [25] In-situ etching of InP in MOVPE chamber using PCl3
    Ougazzaden, A
    Peticolas, L
    Chu, SNG
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II, 2002, 2002 (03): : 253 - 257
  • [26] In-situ reflectance analysis of Si-doped β-Ga2O3 films grown by MOVPE: The influence of doping concentration and substrate conductivity
    Chou, Ta-Shun
    Bin Anooz, Saud
    Galazka, Zbigniew
    Albrecht, Martin
    Fiedler, Andreas
    Popp, Andreas
    JOURNAL OF APPLIED PHYSICS, 2025, 137 (09)
  • [27] In situ monitoring of growth rate and composition of AlGaInP and InGaAsP by reflection measurements in MOVPE
    Watatani, C
    Hanamaki, Y
    Takemi, M
    Ono, K
    Mihashi, Y
    Nishimura, T
    JOURNAL OF CRYSTAL GROWTH, 2005, 281 (2-4) : 227 - 233
  • [28] IN-SITU SELECTIVE-AREA ETCHING AND MOVPE REGROWTH OF GAINAS-INP ON INP SUBSTRATES
    HENLE, B
    RUDELOFF, R
    BOLAY, H
    SCHOLZ, F
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 994 - 997
  • [29] In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE
    Rebey, A
    Habchi, MM
    Bchetnia, A
    El Jani, B
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) : 450 - 457
  • [30] In-situ reflectance monitoring during MOCVD of AlGaN
    T. B. Ng
    J. Han
    R. M. Biefeld
    M. V. Weckwerth
    Journal of Electronic Materials, 1998, 27 : 190 - 195
12345