Splitting of porous silicon microcavity mode due to the interaction with Si-H vibrations

被引：11

作者：

Mattei, G

Marucci, A

Yakovlev, VA

机构：

[1] CNR, Ist Metodol Avanzate Inorgan, Area Ric Roma, I-00016 Monterotondo, Italy

[2] CNR, MITER, Area Ric Roma, I-00016 Monterotondo, Italy

[3] Russian Acad Sci, Inst Spect, Troitsk 142092, Moscow Reg, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 51卷 / 1-3期

关键词：

infrared; microcavity; porous silicon; enhancement;

D O I：

10.1016/S0921-5107(97)00251-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A Fabry-Perot microcavity centred in the infrared around 2000-2200 cm(-1) has been realised by controlling the current and the time of a steps anodization procedure of a p(+) type silicon wafer in an electrochemical cell with a hydrofluoric acid solution. The interaction of the cavity mode, detectable as a sharp deep in the high reflectivity plateau, with the Si-H vibration modes gives rise to a splitting of the cavity mode dispersion curve (frequency vs wavevector) and to an enhancement of the infrared absorption of the Si-H bands. Both, the dispersion of the coupled modes (cavity/Si-H modes) and their infrared absorption enhancement have been studied. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：158 / 161

页数：4