Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing

被引：81

作者：

Shafiei, M. ^{[1
]}

Yu, J.

Arsat, R.

Kalantar-zadeh, K.

Comini, E. ^{[2
]}

Ferroni, M. ^{[2
]}

Sberveglieri, G. ^{[2
]}

Wlodarski, W.

机构：

[1] RMIT Univ, Sensor Technol Lab, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia

[2] SENSOR INFM CNR Univ Brescia, I-25133 Brescia, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2010年 / 146卷 / 02期

关键词：

Gas sensors; Hydrogen; Schottky; Reverse bias; Electric field; Nanostructured ZnO; GAS SENSORS; NEAR-FIELD; SEMICONDUCTOR; NANORODS;

D O I：

10.1016/j.snb.2009.12.028

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, the effect of electric field enhancement on Pt/nanostructured ZnO Schottky diode based hydrogen sensors under reverse bias condition has been investigated. Current-voltage characteristics of these diodes have been studied at temperatures from 25 to 620 degrees C and their free carrier density concentration was estimated by exposing the sensors to hydrogen gas. The experimental results show a significantly lower breakdown voltage in reversed bias current-voltage characteristics than the conventional Schottky diodes and also greater lateral voltage shift in reverse bias operation than the forward bias. This can be ascribed to the increased localized electric fields emanating from the sharp edges and corners of the nanostructured morphologies. At 620 degrees C, voltage shifts of 114 and 325 mV for 0.06% and 1% hydrogen have been recorded from dynamic response under the reverse bias condition. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：507 / 512

页数：6

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