Photodetector Based on Silicon-on-Insulator with High Responsivity

被引：0

作者：

Cao, X. Y. ^{[1
,2
]}

Liu, H. B. ^{[1
]}

Deng, J. N. ^{[1
]}

Lin, W. S. ^{[2
]}

Wan, J. ^{[1
]}

机构：

[1] Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Shanghai, Peoples R China

[2] Shanghai Univ Engn Sci, Sch Mat Engn, Shanghai 201620, Peoples R China

来源：

2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) | 2018年

基金：

上海市自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We present a photodetector based on silicon-on-insulator (SOI) substrate with high responsivity. The device is fabricated by CMOS compatible process at low-temperature. The structure design and fabrication technology are discussed. The test results indicate that this detector has a high sensitivity in the wavelength ranging from 300 nm to 1000 nm. The impact of wavelength and light intensity on the responsivity have been studied.

引用

页码：103 / 106

页数：4

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