Growth of P-type 4H-SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping

P-type 4H-silicon carbide (SiC) crystal growth has been achieved by physical vapor transport using aluminum and nitrogen co-doping. Aluminum carbide with a two-zone heating furnace was used for p-type doping, and yielded homogenous aluminum doping during SiC crystal growth by physical vapor transport. The 4H-SiC polytype with high-aluminum doping was unstable, but aluminum-nitrogen co doping improved its stability. We grew p-type 4H-SiC bulk crystals of less than 90 m Omega cm by using co-doping. Secondary-ion mass spectrometry and Raman spectroscopy showed that the crystal growth of highly doped p-type SiC can be achieved by using the physical vapor transport method. (C) 2017 Elsevier B.V. All rights reserved.