Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory

被引：3
|
作者：
Kim, Wandong [1 ]
Byeon, DaeSeok [1 ]
Joe, Sung-Min [1 ]
Lee, Jinyub [1 ]
Song, Jai Hyuk [1 ]
机构：
[1] Samsung Elect Co LtD, Dept Flash Prod & Technol, Hwasung, South Korea
来源：
2022 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2022年
关键词：
3D NAND Flash Memory; Scale-down Issue; Cell Operation Technique;
D O I：
10.1109/ICEIC54506.2022.9748545
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we introduce key cell operation technologies to overcome scale-down issues in 3D NAND Flash memory. More specifically, we review several program / erase / read techniques to mitigate WL interference and retention problem for more reliable cell operation.
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页数：2
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