CMOS-Compatible Si-Ring-Assisted Mach-Zehnder Interferometer With Internal Bandwidth Equalization

被引：31

作者：

Gill, Douglas M. ^{[1
]}

Patel, Sanjay S. ^{[2
]}

Rasras, Mahmoud ^{[1
]}

Tu, Kun-Yii ^{[1
]}

White, Alice E. ^{[1
]}

Chen, Young-Kai ^{[1
]}

Pomerene, Andrew ^{[3
]}

Carothers, Daniel ^{[4
]}

Kamocsai, Robert L. ^{[3
]}

Hill, Craig M. ^{[3
]}

Beattie, James ^{[5
]}

机构：

[1] Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA

[2] Alcatel Lucent, CTO Fixed Access Div, Murray Hill, NJ 07974 USA

[3] BAE Syst, Microelect Dept Adv Digital Syst, Manassas, VA USA

[4] BAE Syst, Micro Elect Integrat Dept, Tucson, AZ 85737 USA

[5] BAE Syst, Adv Syst & Technol Electroopt Infrared Dept, Nashua, NH 03061 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2010年 / 16卷 / 01期

关键词：

Electrooptic modulation; integrated optics; integrated optoelectronics; resonators; ridged waveguides; SILICON OPTICAL MODULATOR; CARRIER-DEPLETION; RESONATOR;

D O I：

10.1109/JSTQE.2009.2033210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate, to the best of our knowledge, the first electrooptic ring-assisted Mach-Zehnder interferometric (RAMZI) modulator in a CMOS-compatible technology. The RAMZI modulator is manufactured on a CMOS-compatible platform and entirely fabricated in a commercial CMOS foundry. We demonstrate a small-signal 3-dB bandwidth > 15 GHz in a silicon-based carrier-depletion modulator with a 2-V . cm V pi L product, which is approximately two times smaller than previously reported. We achieved a 10-Gb/s eye diagram with a 2-dB extinction ratio using a 4-Vp-p drive in a modulator with a 680-mu m optic/RF interaction region. In addition, we demonstrate internal bandwidth equalization within the tunable CMOS-compatible RAMZI modulator, and discuss the optical carrier and modulation sideband response, and relaxation characteristics that lead to this behavior within resonant modulators.

引用

页码：45 / 52

页数：8

共 29 条

[1]

Doerr C. R., 2005, P ECOC 2005

[2]

GILL DM, 2007, P OFC 2007

[3]

GILL DM, 2009, PHOTON TECHNOL LETT, V21, P200

[4] Ultra-compact, low RF power, 10 gb/s silicon Mach-Zehnder modulator [J].

Green, William M. J. ;

Rooks, Michael J. ;

Sekaric, Lidija ;

Vlasov, Yurii A. .

OPTICS EXPRESS, 2007, 15 (25) :17106-17113

[5] Strained silicon as a new electro-optic material [J].

Jacobsen, RS ;

Andersen, KN ;

Borel, PI ;

Fage-Pedersen, J ;

Frandsen, LH ;

Hansen, O ;

Kristensen, M ;

Lavrinenko, AV ;

Moulin, G ;

Ou, H ;

Peucheret, C ;

Zsigri, B ;

Bjarklev, A .

NATURE, 2006, 441 (7090) :199-202

[6] Large electro-optic effect in tensile strained Ge-on-Si films [J].

Jongthammanurak, Samerkhae ;

Liu, Jifeng ;

Wada, Kazumi ;

Cannon, Douglas D. ;

Danielson, David T. ;

Pan, Dong ;

Kimerling, Lionel C. ;

Michel, Jurgen .

APPLIED PHYSICS LETTERS, 2006, 89 (16)

[7] A novel high-speed polymeric EO modulator based on a combination of a microring resonator and an MZI [J].

Leinse, A ;

Diemeer, MBJ ;

Rousseau, A ;

Driessen, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (10) :2074-2076

[8] Silicon microring carrier-injection-based modulators/switches with tunable extinction ratios and OR-logic switching by using waveguide cross-coupling [J].

Li, Chao ;

Zhou, Linjie ;

Poon, Andrew W. .

OPTICS EXPRESS, 2007, 15 (08) :5069-5076

[9] 40 Gbit/s silicon optical modulator for high-speed applications [J].

Liao, L. ;

Liu, A. ;

Rubin, D. ;

Basak, J. ;

Chetrit, Y. ;

Nguyen, H. ;

Cohen, R. ;

Izhaky, N. ;

Paniccia, M. .

ELECTRONICS LETTERS, 2009, :51-52

[10] Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on an SOI platform [J].

Liu, Jifeng ;

Pan, Dong ;

Jongthammanurak, Samerkhae ;

Wada, Kazumi ;

Kimerling, Lionel C. ;

Michel, Jurgen .

OPTICS EXPRESS, 2007, 15 (02) :623-628

← 1 2 3 →