Temperature dependency of x-cut LiNbO3 modulator DC drift

被引：2
|
作者：
Nagata, H [1 ]
Ishizuka, Y [1 ]
Akizuki, K [1 ]
机构：
[1] Sumitomo Osaka Cement Co Ltd, Optoelect Res Div, Funabashi, Chiba 2748601, Japan
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 23期
关键词：
D O I：
10.1049/el:20001355
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The activation energy (E (a)) for DC drifts chi -cut LiNbO3 (LN) modulators was obtained to be 1.4 +/- 0.2eV based on statistical consideration of long-term biased aging test data at 100 and 120 degreesC. E (a) = 1.4eV means that 20 years of device life at 65 degreesC - common system requirements - can be promptly tested by 9 days' aging at 120 degreesC.
引用
收藏
页码：1952 / 1953
页数：2
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