EUV Lithography - Progress, Challenges and Outlook

被引：6

作者：

Wurm, S. ^{[1
]}

机构：

[1] SEMATECH, Albany, NY 12203 USA

来源：

30TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 2014年 / 9231卷

关键词：

Lithography; Extreme Ultraviolet Lithography; EUVL;

D O I：

10.1117/12.2076766

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Extreme Ultraviolet Lithography (EUVL) has been in the making for more than a quarter century. The first EUVL production tools have been delivered over the past year and chip manufacturers and suppliers are maturing the technology in pilot line mode to prepare for high volume manufacturing (HVM). While excellent progress has been made in many technical and business areas to prepare EUVL for HVM introduction, there are still critical technical and business challenges to be addressed before the industry will be able to use EUVL in HVM.

引用

页数：7

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