Determination of the carrier concentration in doped n-GaAs layers by Raman and light reflection spectroscopies

被引：3
作者：
Avakyants, L. P. [1 ]
Bokov, P. Yu.
Volchkov, N. A.
Kazakov, I. P.
Chervyakov, A. V.
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119992, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
OPTICS AND SPECTROSCOPY | 2007年 / 102卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S0030400X07050104
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The carrier concentrations in Si-doped n-GaAs films have been determined by Raman and light reflection spectroscopies. The data obtained are in good agreement with the results of Hall measurements. It is shown that the light reflection and Raman spectroscopies supplement each other in determination of carrier concentrations in the range 10(17)-10(19) cm(-1).
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页码：712 / 716
页数：5
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