Electrical Transport Properties of Gallium Phosphide under High Pressure

被引：3
作者：
Li, Yuqiang [1 ,2 ]
Liu, Jie [1 ]
Xiao, Ningru [2 ]
Yu, Liyuan [1 ]
Zhang, Jianxin [1 ]
Ning, Pingfan [2 ,3 ]
Zhang, Zanyun [2 ,4 ]
Niu, Pingjuan [1 ,2 ]
机构：
[1] Tianjin Polytech Univ, Sch Elect Engn & Automat, Tianjin Key Lab Adv Elect Engn & Energy Technol, Tianjin 300387, Peoples R China
[2] Tianjin Polytech Univ, Int Res Ctr Photon, Engn Res Ctr High Power Solid State Lighting Appl, Minist Educ, Tianjin 300387, Peoples R China
[3] Otto von Guericke Univ, Inst Phys, D-39106 Magdeburg, Germany
[4] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2020年 / 257卷 / 03期
基金：
中国国家自然科学基金;
关键词：
diamond anvil cells; Hall effect; high pressures; metallization; resistivity; METAL TRANSITION; GAP; SEMICONDUCTORS; BEHAVIOR;
D O I：
10.1002/pssb.201900470
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electrical transport properties of gallium phosphide (GaP) under high pressure (up to 50 GPa) are investigated using in situ impedance-spectrum and Hall-effect measurements. A discontinuous resistance is observed at 9.9 GPa because of the pressure-induced grain boundary effect, whereas the pressure-induced metallization of GaP occurred at approximate to 24.6 GPa. The metallization transition is determined by measuring the temperature-dependent resistance and resistivity, and the transition is observed to be reversible. The main cause of the sharp decrease in the resistance and resistivity is a pressure-induced structural phase transition at 39.3 GPa, as reflected by the measured Hall parameters.
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页数：5
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