Plasma enhanced chemical vapor deposition of zirconium nitride thin films

被引:0
|
作者
Atagi, LM [1 ]
Samuels, JA [1 ]
Smith, DC [1 ]
Hoffman, DM [1 ]
机构
[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:289 / 294
页数:6
相关论文
共 50 条
  • [31] Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition
    Li D.-L.
    Feng X.-F.
    Wen Z.-Y.
    Shang Z.-G.
    She Y.
    Optoelectronics Letters, 2016, 12 (4) : 285 - 289
  • [32] Plasma-enhanced chemical vapor deposition of organic particle thin films
    Dongsheng Li
    Raymond Vrtis
    Anaram Shahravan
    Themis Matsoukas
    Journal of Nanoparticle Research, 2011, 13 : 985 - 996
  • [33] Plasma-enhanced chemical vapor deposition of organic particle thin films
    Li, Dongsheng
    Vrtis, Raymond
    Shahravan, Anaram
    Matsoukas, Themis
    JOURNAL OF NANOPARTICLE RESEARCH, 2011, 13 (03) : 985 - 996
  • [34] THIN-FILMS FORMED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    ILLIC, DB
    HEWLETT-PACKARD JOURNAL, 1982, 33 (08): : 24 - 27
  • [35] High density plasma enhanced chemical vapor deposition of optical thin films
    Daineka, D
    Bulkin, P
    Girard, G
    Bourée, JE
    Drévillon, B
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 26 (01): : 3 - 9
  • [36] CHEMICAL-VAPOR-DEPOSITION OF NITRIDE THIN-FILMS
    HOFFMAN, DM
    POLYHEDRON, 1994, 13 (08) : 1169 - 1179
  • [37] Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition
    Yang Hang-Sheng
    ACTA PHYSICA SINICA, 2006, 55 (08) : 4238 - 4246
  • [38] Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress
    Belyansky, M.
    Chace, M.
    Gluschenkov, O.
    Kempisty, J.
    Klymko, N.
    Madan, A.
    Mallikarjunan, A.
    Molis, S.
    Ronsheim, P.
    Wang, Y.
    Yang, D.
    Li, Y.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (03): : 517 - 521
  • [39] PREPARATION OF GROUP 13 AND 14 NITRIDE THIN-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    HOFFMAN, DM
    RANGARAJAN, SP
    ATHAVALE, SD
    ECONOMOU, DJ
    LIU, JR
    ZHENG, ZH
    CHU, WK
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 186 - INOR
  • [40] High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition
    Lim, S
    Kim, SJ
    Jung, JH
    Ju, BK
    Oh, MH
    Wager, JF
    IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, : 406 - 410