Dynamics of light-induced FeB pair dissociation in crystalline silicon

The dynamics of light-induced dissociation of iron-boron (FeB) pairs in p-type crystalline silicon is investigated. The dissociation is observed to be a single-exponential process which is balanced with thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate and the inverse square of the FeB concentration. This suggests that the dissociation process involves two recombination or electron capture events. A proportionality constant of 5x10(-15) s describes the dissociation rate well in the absence of other significant recombination channels. The dissociation rate decreases in the presence of other recombination channels. These results can be used for reliable detection of iron in silicon devices and materials, and for further elucidation of the electronically driven FeB dissociation reaction. (C) 2004 American Institute of Physics.