Growth of aluminum nitride films at low temperature

被引：6

作者：

Lin, YR ^{[1
]}

Wu, ST ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 1-3期

关键词：

X-ray diffraction; physical vapor deposition processes; vapor phase epitaxyl; nitrides; sapphire;

D O I：

10.1016/S0022-0248(03)00883-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The epitaxial growth of aluminum nitride films on Al2O3 (0 0 0 1) by sputtering is achieved using a 30 nm thick buffer layer of aluminum and titanium nitride. Both buffer layers facilitate epitaxial growth. In particular, an epitaxial film can be deposited at room temperature if the buffer layer is Al. Pole figures of X-ray diffraction elucidate the crystallinity of films. (C) 2003 Published by Elsevier Science B.V.

引用

页码：433 / 439

页数：7

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