Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

被引：32

作者：

Chikita, H. ^{[1
]}

Matsumura, R. ^{[1
,2
]}

Kai, Y. ^{[1
]}

Sadoh, T. ^{[1
]}

Miyao, M. ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[2] JSPS, Chiyoda Ku, Tokyo 1020083, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 20期

关键词：

MOBILITY;

D O I：

10.1063/1.4902344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To produce high-performance devices on flexible plastic substrates, it is essential to form Ge-based group IV semiconductors on insulating substrates at low temperatures (<= 250 degrees C). We have developed a technique for solid phase crystallization of amorphous GeSn (<= 220 degrees C) enhanced by Sn doping, and combined with a seeding technique induced by Sn melting (similar to 250 degrees C). This combination produces lateral crystallization of amorphous GeSn from seed arrays with no incubation time. As a result, extremely high growth velocities at 220 degrees C, depending on Sn concentration, e.g., 0.13 mu m/h (14% Sn) and 1100 mu m/h (23% Sn), are achieved. These velocities are 10(4)-10(8) times higher than that of pure Ge. This technique enables growth of crystalline GeSn island arrays (diameters: 50-150 mu m) at low temperatures (<= 250 degrees C) at controlled positions on insulating substrates. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 19 条

[1] Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique [J].