Mn diffusion in Ga1-xMnxAs/GaAs superlattices

被引：6

作者：

Mikkelsen, A

Ouattara, L

Davidsson, H

Lundgren, E

Sadowski, J

Pacherova, O

机构：

[1] Lund Univ, Dept Synchrotron Radiat Res, S-22100 Lund, Sweden

[2] Lund Univ, Max Lab, S-22100 Lund, Sweden

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague, Czech Republic

[5] Czech Tech Univ, Fac Mech Engn, CZ-16607 Prague, Czech Republic

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1818338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga1-xMnxAs/GaAs superlattices with Mn concentrations of 1% and 5% in the Ga1-xMnxAs layers and a GaAs spacer thickness of 4 and 60 GaAs monolayers have been studied by cross-sectional scanning tunneling microscopy. By achieving atomic resolution of the superlattices, we observe individual Mn atoms in the Ga1-xMnxAs layers and in the GaAs spacer. We find that about 20% of the total amount of Mn diffuses from the GaMnAs layers into the GaAs spacer layers. Our results can be related to previous measurements of the magnetic properties of short period Ga1-xMnxAs/GaAs superlattices. (C) 2004 American Institute of Physics.

引用

页码：4660 / 4662

页数：3

共 13 条

[1] Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures
Chiba, D
Akiba, N
Matsukura, F
Ohno, Y
Ohno, H
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1873 - 1875
[2] Nano-scale properties of defects in compound semiconductor surfaces
Ebert, P
[J]. SURFACE SCIENCE REPORTS, 1999, 33 (4-8) : 121 - 303
[3] Self-compensation in manganese-doped ferromagnetic semiconductors
Erwin, SC
Petukhov, AG
[J]. PHYSICAL REVIEW LETTERS, 2002, 89 (22) : 227201 - 227201
[4] CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF ILL-V SEMICONDUCTOR STRUCTURES
FEENSTRA, RM
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2157 - 2168
[5] Atomic-scale study of GaMnAs/GaAs layers
Grandidier, B
Nys, JP
Delerue, C
Stiévenard, D
Higo, Y
Tanaka, M
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (24) : 4001 - 4003
[6] MATHIEU G, 2003, APPL PHYS LETT, V82, P712
[7] Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices
Mathieu, R
Svedlindh, P
Sadowski, J
Swiatek, K
Karlsteen, M
Kanski, J
Ilver, L
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (16) : 3013 - 3015
[8] Defect structure of Ga1-xMnxAs:: A cross-sectional scanning tunneling microscopy study -: art. no. 085411
Mikkelsen, A
Sanyal, B
Sadowski, J
Ouattara, L
Kanski, J
Mirbt, S
Eriksson, O
Lundgren, E
[J]. PHYSICAL REVIEW B, 2004, 70 (08) : 085411 - 1
[9] Properties of ferromagnetic III-V semiconductors
Ohno, H
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) : 110 - 129
[10] Device physics - Magnetoelectronics
Prinz, GA
[J]. SCIENCE, 1998, 282 (5394) : 1660 - 1663

← 1 2 →